JPS6268208U - - Google Patents

Info

Publication number
JPS6268208U
JPS6268208U JP1985157766U JP15776685U JPS6268208U JP S6268208 U JPS6268208 U JP S6268208U JP 1985157766 U JP1985157766 U JP 1985157766U JP 15776685 U JP15776685 U JP 15776685U JP S6268208 U JPS6268208 U JP S6268208U
Authority
JP
Japan
Prior art keywords
container
helium container
insulating material
relaxation
storage device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1985157766U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0319211Y2 (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985157766U priority Critical patent/JPH0319211Y2/ja
Publication of JPS6268208U publication Critical patent/JPS6268208U/ja
Application granted granted Critical
Publication of JPH0319211Y2 publication Critical patent/JPH0319211Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Containers, Films, And Cooling For Superconductive Devices (AREA)
JP1985157766U 1985-10-17 1985-10-17 Expired JPH0319211Y2 (en])

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985157766U JPH0319211Y2 (en]) 1985-10-17 1985-10-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985157766U JPH0319211Y2 (en]) 1985-10-17 1985-10-17

Publications (2)

Publication Number Publication Date
JPS6268208U true JPS6268208U (en]) 1987-04-28
JPH0319211Y2 JPH0319211Y2 (en]) 1991-04-23

Family

ID=31080622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985157766U Expired JPH0319211Y2 (en]) 1985-10-17 1985-10-17

Country Status (1)

Country Link
JP (1) JPH0319211Y2 (en])

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line

Also Published As

Publication number Publication date
JPH0319211Y2 (en]) 1991-04-23

Similar Documents

Publication Publication Date Title
JPS6268208U (en])
JPH0319214U (en])
JPS622388U (en])
JPS6457345U (en])
JPS63123885U (en])
JPS62117397U (en])
JPS6230096U (en])
JPS61194456U (en])
JPH01164179U (en])
JPS628703U (en])
JPH01163896U (en])
JPH0197603U (en])
JPS6260577U (en])
JPS6281687U (en])
JPS63106841U (en])
JPS62132393U (en])
JPH0248551U (en])
JPH0189519U (en])
JPS61110066U (en])
JPS6159998U (en])
JPS63102212U (en])
JPS61194170U (en])
JPS6363618U (en])
JPS6240858U (en])
JPS6296197U (en])